next-generation semiconductors
Wide-Bandgap Semiconductors (SiC, GaN)
WBG Pilot Line project aims to revolutionize the testing and experimentation of advanced technologies based on current WBG materials (i.e. SiC and GaN) introducing new device concepts and architectures
New generation of materials
Wide-bandgap (WBG) semiconductors, such as Silicon Carbide (SiC) and Gallium Nitride (GaN), represent a new generation of materials that outperform traditional silicon in power electronics. Their wider bandgap allows devices to operate at higher voltages, higher temperatures, and higher switching frequencies, enabling superior performance and efficiency.
The main advantage of SiC is in the high voltage range. In the medium voltage around 1kV silicon can be a competitor.
- Electric mobility: SiC and GaN devices are central to EV inverters, chargers, and powertrains.
- Renewable energy: Improving the efficiency of solar inverters and wind power conversion systems.
- Industrial automation: Supporting compact, reliable, and energy-saving power modules.
- Telecommunications & aerospace: Providing high-performance solutions for RF, radar, and satellite systems.
Specific device technologies to be developed include
Establish a distributed pilot line across seven nations with 14 partners. The pilot line will
focus on
- SiC: MOSFETs, diodes, and BJTs.
- • GaN: RF and power lateral devices, as well as vertical devices.
- GaO: Vertical devices
- AlN: RF and power lateral devices.
Materials: SiC, GaN, GaO, AlN, and diamond.
Technologies: Substrate and epitaxy growth, power device processing, MEMS and
detector processing, characterization and reliability, PDK development, and
packaging
