Advancing Research in Wide Bandgap Semiconductors

Explore scientific publications highlighting research advancements in SiC, GaN and next-generation semiconductor technologies

Pubblications
  1. A. M. Vianello, S. L. Longato, M. Fregolent, F. Rampazzo, M. Buffolo, D. Wang, B. Da, H. Fu, S. Luo, C. Chang, Y. Zhao, I. Rossetto, C. De Santi, G. Meneghesso, E. Zanoni, M. Meneghini, “Modeling the Changes in the Current–Voltage Characteristics of Vertical GaN-on-GaN p-i-n Diodes Under Electrical Stress”, IEEE Transactions on Electron Devices, vol. 73, no. 8, pp. 5120-5126, Aug. 2026. https://doi.org/10.1109/TED.2026.36782392
  2. A. Uedono, S. Ishibashi, K. Shima, S. F. Chichibu, K. Sierakowski, M. Oishi, N. Okada, T. Nagai, M. Bockowski, “Vacancy-type defects introduced by mechanical polishing in ammonothermal GaN studied by a monoenergetic positron beam”, Journal of Crystal Growth 688 (2026) 128622. https://doi.org/10.1016/j.jcrysgro.2026.128622
  3. B. Orfao, M. Abou Daher, H. Bouillaud, Y. Roelens, P. Prystawko, R. Kucharski, M. Bockowski, M. Zaknoune, “Comparison of reverse current mechanisms in GaN Schottky diodes grown on sapphire versus ammonothermal GaN substrates”,  J. Phys. D: Appl. Phys. 59 12LT01. https://doi.org/10.1088/1361-6463/ae506d
  4. G. Greco, S. Milazzo, P. Rocha, T. S. Tlemcani, P. Fiorenza, S.E. Panasci, F. Bartoli, E. Frayssinet, F. Giannazzo, D. Alquier, Y. Cordier, M. Bockowski, F. Roccaforte, “Electrical properties of Schottky diodes on ammonothermal and hydride vapor phase epitaxy GaN substrates”, Materials Science in Semiconductor Processing 216, 111109 (2026). https://doi.org/10.1016/j.mssp.2026.111109
  5. G. Greco, S. Milazzo, S. E. Panasci, P. Fiorenza, L. Kirste, F. Giannazzo, F. Iucolano, F. Roccaforte, “Modeling of Non-Ideal Ni/Ga2O3 Schottky Contacts by Two-Barrier Thermionic Emission Model, IEEE Transactions on Electron Devices, 2026. https://doi.org/ 10.1109/TED.2026.3674869.
  6. P. Rocha, K. Nadaud, G. Greco, T. Slimani Tlemcani, M. Bah, M. Bockowski, F. Bartoli, E. Frayssinet, Y. Cordier, F. Roccaforte, D. Alquier, “Superior quality of n− GaN epilayer grown on ammonothermal substrate accessed by DLTS”, Micro and Nanostructures 218 (2026) 208797. https://doi.org/10.1016/j.micrna.2026.208797.
  7. F. Roccaforte, S. E. Panasci, V. Votadoro, S. Di Franco, M. Vivona, S. Milazzo, M. Zignale, F. Giannazzo, B. Pécz, P. Fiorenza, “Electrical Properties and Interfacial Strain in Thermally Oxidized 4H-SiC MOS Structures Under Different Post-Oxidation Annealing”, Advanced Electronic Materials (2026): e70561. https://doi.org/10.1002/aelm.70561
  8. A. Garofalo, A. Roncaglia, A. Muoio, L. Belsito, S. Sapienza , M. Ferri, F. La Via,  “Heteroepitaxial 3C-SiC for MEMS Applications”, Micromachines 2026, 17, 502. https://doi.org/10.3390/mi17040502.
  9. E. Sangregorio, A. S. Mancuso, S. De Luca, A. Muoio, L. Calcagno, F. La Via, “Transient Charge Collection in Ultra-Thin SiC Membranes for Single-Ion Detection”, Sensors 2026, 26, 1809. https://doi.org/10.3390/s26061809
  10. A. S. Mancuso, I. Lopez Paz, M. Hakeem Kushoro, S. De Luca, E. Gallo, M. Jiménez, N. Moffat, A. Muoio, G. Pellegrini, M. Pérez, E. Quadrivi, E. Sangregorio, A. Trotta, S. Tudisco, S. Vanellone, F. La Via, “Wide reverse-bias response of a 100-µm 4H-SiC PiN detector: UV-TCT probing, α sources and D–T neutrons”, Measurement 282 (2026) 121924. https://doi.org/10.1016/j.measurement.2026.121924
  11. A. Muoio, A. Garofalo, F. La Via, “Microstructure-Driven Loss Mechanisms and Tensor-Based FEM Calibration”, Micromachines 2026, 17(7), 850. https://doi.org/10.3390/mi17070850
  12. S. De Luca, A. S. Mancuso, A. Muoio, E. Sangregorio, F. La Via, “Characterization of the Electric Field in Silicon Carbide Detectors by Optical Beam Induced Current”, Materials Science Forum, 1191, pp 37-42 (2026). https://doi.org/10.4028/p-lyf5Sy
CONFERENCE PROCEEDINGS:
  1. G. Zappalà, D. Lideo, C. De Santi, G. Meneghesso, E. Zanoni, M. Meneghini, “Threshold Voltage Instability in State-of-the-Art SiC Transistors: Experimental Analysis and Challenges”, 37th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis 2026
  2. R. Kumar, C. De Santi, G. Meneghesso, E. Zanoni, M. Meneghini, “Threshold Voltage Instability in SiC MOSFET, Cascode GaN, and p-GaN HEMT Under MHz Gate Switching Stress”, 37th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis 2026.
  3. A. M. Vianello, S. L. Longato, M. Fregolent, F. Rampazzo, M. Buffolo, D. Wang, B. Da, H. Fu, S. Luo, C. Chang, Y. Zhao, I. Rossetto, C. De Santi, G. Meneghesso, E. Zanoni, M. Meneghini, “H-terminated Vertical GaN Diodes Under Electrical Stress: Characterization and Modeling”, 37th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis 2026.
  4. F. Roccaforte, S. Milazzo, G. Greco, E. Schilirò, R. Lo Nigro, P. Fiorenza, F. Giannazzo, S. Mirabella, F. Iucolano, D. Alquier, Y. Cordier, M. Bockowski, “Advances in gate stack engineering for GaN devices: from Schottky contacts to insulating layers”, Proc. of 49th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe & 20th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (WOCSDICE-EXMATEC 2026), Gdansk (Poland), May 25-28, 2026, Eds. M. Leszczynski, P. Prystawko, pp. 23-26.
  5. G. Greco, S. Milazzo, S.E. Panasci, P. Fiorenza, F. Giannazzo, F. Iucolano, F. Roccaforte, “Two-Barrier Thermionic Emission Modeling of Non-Ideal Ni/Ga₂O₃ Schottky Diodes”, Proc. of 49th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe & 20th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (WOCSDICE-EXMATEC 2026), Gdansk (Poland), May 25-28, 2026, Eds. M. Leszczynski, P. Prystawko, pp. 103-104.
  6. F. Giannazzo, S.E. Panasci, E. Schilirò, G. Greco, M. Vivona, R. Lo Nigro, P. Fiorenza, F. Roccaforte, “Two-Dimensional Materials and Wide Bandgap Semiconductors: Integration Challenges and Novel Device Applications” (Invited), 2026 IEEE International Reliability Physics Symposium (IRPS), Tucson, AZ, USA, 2026, pp. 1-10. https://doi.org/10.1109/IRPS61424.2026.11499179.
  7. S. De Luca, A. S. Mancuso, A. Muoio, E. Sangregorio, F. La Via, “Characterization of the Electric Field in Silicon Carbide Detectors by Optical Beam Induced Current”, Materials Science Forum, 1191, pp 37-42 (2026), https://doi.org/10.4028/p-lyf5Sy.

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